High-Efficiency Power Conversion with Infineon's 1200V 20A IHW20N135R5 Superjunction MOSFET

In the evolving landscape of power electronics, achieving higher efficiency and power density remains a critical objective across industries such as renewable energy, industrial motor drives, and electric vehicle charging systems. Infineon Technologies addresses these demands with the IHW20N135R5, a 1200V 20A Superjunction MOSFET engineered to deliver exceptional switching performance and thermal stability. This device leverages Infineon’s advanced CoolMOS™ technology, offering designers a robust solution to minimize losses and enhance system reliability.

One of the standout features of the IHW20N135R5 is its ultra-low on-state resistance (RDS(on)), which is typically just 135mΩ. This low resistance directly translates to reduced conduction losses, allowing the MOSFET to operate efficiently even under high-current conditions. Moreover, the device exhibits superior switching characteristics, thanks to its optimized gate charge and output capacitance. This enables faster switching frequencies, which is crucial for shrinking the size of magnetic components and filters, thereby increasing overall power density.

Thermal management is another area where this MOSFET excels. The low thermal resistance and high avalanche ruggedness ensure reliable operation under extreme conditions, making it suitable for applications prone to voltage spikes and transients. Additionally, the device’s design minimizes electromagnetic interference (EMI), simplifying compliance with stringent industry standards.

The IHW20N135R5 is particularly well-suited for use in power factor correction (PFC) stages, switch-mode power supplies (SMPS), and inverters for solar and industrial applications. Its high voltage rating of 1200V provides ample headroom for 800V bus systems, commonly found in modern high-power setups.

ICGOOODFIND:

The Infineon IHW20N135R5 sets a new benchmark for high-voltage power switches, combining low losses, robust thermal performance, and design flexibility—key attributes for next-generation power conversion systems.

Keywords:

Superjunction MOSFET, High-Efficiency, 1200V Rating, Low RDS(on), Thermal Stability