Infineon IPB108N15N3GATMA1: High-Performance OptiMOS 5 Power MOSFET for Automotive and Industrial Applications

In the rapidly advancing domains of automotive electrification and industrial automation, the demand for power semiconductors that offer superior efficiency, robustness, and miniaturization has never been greater. Addressing this need, the Infineon IPB108N15N3GATMA1 stands out as a premier OptiMOS 5 power MOSFET, engineered to set new benchmarks in performance for demanding applications.

This device is a N-channel MOSFET built on Infineon’s advanced OptiMOS 5 technology platform, which utilizes a super-junction process to achieve an exceptional balance between low on-state resistance and high switching performance. With a voltage rating of 150V and a continuous drain current of 108A, it is specifically designed to handle high power levels with minimal losses. A key highlight is its ultra-low typical RDS(on) of just 3.8 mΩ, which directly translates to reduced conduction losses, higher overall system efficiency, and lower heat generation. This allows designers to create more compact solutions with reduced cooling requirements or to push the limits of power density.

The automotive sector, with its stringent requirements for reliability and performance, is a primary beneficiary. The IPB108N15N3GATMA1 is AEC-Q101 qualified, ensuring it meets the rigorous quality and durability standards for automotive components. It is an ideal candidate for a wide array of applications, including electric power steering (EPS), braking systems, DC-DC converters in 48V mild-hybrid systems, and battery management. Its ability to operate efficiently at high frequencies also makes it perfect for high-switching-frequency designs like synchronous rectification in SMPS.

For industrial applications, this MOSFET brings enhanced reliability and efficiency to power supplies, motor drives, and solar inverters. Its low gate charge (Qg) and exceptional reverse recovery characteristics minimize switching losses, which is critical for high-frequency operation and improving the overall efficiency of the system.

Housed in a TOLL (TO-Leadless) package, the component offers a compact footprint and superior thermal performance compared to traditional packages like D2PAK. The leadless design minimizes parasitic inductance, which is crucial for managing voltage spikes in fast-switching scenarios. Furthermore, the package features an exposed top side for dual-side cooling, enabling more effective thermal management when used with appropriate heatsinking strategies.

ICGOODFIND: The Infineon IPB108N15N3GATMA1 is a high-performance OptiMOS 5 power MOSFET that delivers exceptional efficiency and power density through its ultra-low RDS(on) and advanced TOLL packaging. It is a robust, AEC-Q101 qualified solution ideal for the most demanding automotive and industrial power systems.

Keywords: OptiMOS 5, Ultra-low RDS(on), AEC-Q101 Qualified, TOLL Package, High Power Density.