Infineon BSC146N10LS5: High-Performance OptiMOS 5 Power MOSFET for Efficient Power Conversion

In the realm of modern power electronics, efficiency, power density, and reliability are paramount. The Infineon BSC146N10LS5 stands out as a premier solution, engineered to meet these demanding requirements. As part of Infineon's esteemed OptiMOS™ 5 power MOSFET family, this device is specifically designed to minimize power losses and maximize performance in a wide array of switching applications.

At the heart of this MOSFET's superiority is its exceptional low on-state resistance (R DS(on)) of just 1.46 mΩ (max). This ultra-low resistance is a key contributor to reducing conduction losses, which is critical for enhancing overall system efficiency, especially in high-current applications. Whether deployed in synchronous rectification stages of switch-mode power supplies (SMPS), DC-DC converters, or motor control systems, the BSC146N10LS5 ensures that more power is delivered to the load and less is wasted as heat.

Furthermore, the device boasts an outstanding gate charge (Q G) performance. The low gate charge enables extremely fast switching speeds, which significantly cuts down switching losses. This characteristic is vital for high-frequency operation, allowing designers to push the boundaries of power density by enabling the use of smaller passive components like inductors and capacitors. The combination of low R DS(on) and low Q G makes the OptiMOS™ 5 technology a benchmark for efficiency.

The BSC146N10LS5 is rated for 100 V drain-source voltage (V DS) and a continuous drain current (I D) of 240 A, making it a robust and versatile component for demanding 48V systems, industrial drives, and telecom infrastructure. Its high current handling capability ensures reliable operation under strenuous conditions. The component is also housed in a SuperSO8 package, which offers an excellent power-to-size ratio and superior thermal performance, aiding in effective heat dissipation and contributing to a longer operational lifespan.

Designers will also appreciate the MOSFET's enhanced avalanche ruggedness and its qualification for industrial and automotive applications, underscoring Infineon's commitment to quality and durability. This reliability is essential for systems that must operate consistently in harsh environments.

ICGOOFind: The Infineon BSC146N10LS5 OptiMOS™ 5 power MOSFET is a top-tier component that sets a high standard for efficiency and performance in power conversion. Its industry-leading low R DS(on) and optimized switching characteristics make it an ideal choice for designers aiming to create compact, efficient, and reliable high-power solutions.

Keywords: OptiMOS™ 5, Low R DS(on), High Efficiency, Power MOSFET, Fast Switching