Infineon DD100N16S: A Deep Dive into the 100A, 160V OptiMOS Power MOSFET

The relentless pursuit of higher efficiency, power density, and reliability in power electronics drives the continuous innovation in semiconductor technology. At the forefront of this innovation is Infineon Technologies' OptiMOS™ family, renowned for its exceptional performance in switching applications. The Infineon DD100N16S stands as a prime example, a Power MOSFET engineered to deliver ultra-low switching losses and high current capability. This article explores the key specifications from its datasheet and highlights critical application considerations.

Datasheet Highlights and Key Specifications

The DD100N16S is a N-channel power MOSFET built on Infineon's advanced OptiMOS technology platform. Its primary ratings are clearly defined: a drain-source voltage (VDS) of 160V and a continuous drain current (ID) of 100A at a case temperature (Tc) of 25°C. This robust voltage and current rating make it an ideal candidate for a wide range of demanding industrial and automotive applications.

The most compelling feature of this device is its exceptionally low figure-of-merit, characterized by RDS(on) Qg. The typical on-state resistance (RDS(on)) is a mere 1.8 mΩ (max. at VGS=10V, ID=50A), which directly translates to minimized conduction losses. This low RDS(on) is paramount for high-current applications, as it reduces heat generation and improves overall system efficiency.

Complementing the low conduction loss is the optimized gate charge. The total gate charge (Qg) is typically 120 nC, which contributes to very low switching losses. A lower Qg allows for faster switching speeds and reduces the stress on the gate driver circuitry. The combination of ultra-low RDS(on) and Qg ensures that the DD100N16S operates with maximum efficiency across a wide frequency range, making it suitable for high-frequency switch-mode power supplies (SMPS) and motor drives.

The device is offered in a SuperSO8 (PG-TDSON-8) package, which provides an excellent power-to-size ratio. This package features an exposed die pad for superior thermal performance, enabling efficient heat dissipation away from the silicon die. This is critical for maintaining junction temperature within safe operating limits and achieving the high current ratings.

Application Notes and Circuit Considerations

To harness the full potential of the DD100N16S, careful attention must be paid to the application design. Key considerations include:

1. Gate Driving: To achieve the fast switching speeds this MOSFET is capable of, a low-impedance, high-current gate driver is essential. The driver must be able to source and sink the necessary current to rapidly charge and discharge the input capacitance (Ciss). Proper gate driver design minimizes switch transition times and prevents shoot-through in half-bridge configurations.

2. Layout and Parasitics: The high di/dt and dv/dt capabilities of the DD100N16S make the PCB layout critical. Minimizing parasitic inductance in the power loop (drain-source path) and gate loop is vital to suppress voltage spikes and ringing, which can otherwise lead to electromagnetic interference (EMI) issues and potential device overvoltage stress.

3. Thermal Management: Despite its low RDS(on), managing power dissipation is crucial. A properly designed heatsink or cooling solution is required to keep the junction temperature well below the maximum rating of 175°C. Utilizing the large copper area under the PG-TDSON-8 package for heatsinking is a highly recommended practice.

4. Avalanche and Ruggedness: The datasheet specifies energy ratings for single pulse avalanche (EAS) and repetitive avalanche (EAR), indicating a robust design. This ruggedness is beneficial in applications like motor control, where inductive load switching can cause voltage transients.

ICGOOODFIND: The Infineon DD100N16S OptiMOS Power MOSFET is a high-performance solution that excels in efficiency, power density, and thermal performance. Its standout features of ultra-low RDS(on) and optimized switching characteristics make it a superior choice for designers aiming to push the boundaries in high-current, high-frequency power conversion systems, including server & telecom SMPS, DC-DC converters, and motor drives.

Keywords: OptiMOS, RDS(on), Switching Losses, Power Density, Thermal Performance.