Infineon IPD80R280P7ATMA1 80 mΩ StrongIRFET Power MOSFET for High-Efficiency Automotive and Industrial Applications

Release date:2025-10-31 Number of clicks:179

Infineon IPD80R280P7ATMA1 80 mΩ StrongIRFET Power MOSFET for High-Efficiency Automotive and Industrial Applications

The demand for high-efficiency, robust power management solutions continues to grow across automotive and industrial sectors. Addressing this need, Infineon Technologies introduces the IPD80R280P7ATMA1, an 80 mΩ StrongIRFET Power MOSFET engineered to deliver superior performance in demanding applications. This device combines low on-state resistance with high switching efficiency, making it an ideal choice for systems where energy loss and thermal management are critical concerns.

A key highlight of the IPD80R280P7ATMA1 is its exceptionally low RDS(on) of just 80 mΩ, which minimizes conduction losses and improves overall system efficiency. This feature is particularly valuable in automotive environments, where components must operate reliably under high current conditions—such as in electric power steering (EPS), braking systems, and engine management units. The reduced power dissipation also alleviates thermal stress, contributing to longer component lifespans and enhanced reliability.

Built using Infineon’s advanced StrongIRFET technology, this MOSFET offers optimized switching characteristics that help reduce electromagnetic interference (EMI) and switching losses. This makes it suitable for high-frequency DC-DC converters, motor drives, and industrial power supplies. The technology also ensures improved avalanche ruggedness and high temperature operation, critical for industrial automation and automotive applications where transient voltages and harsh conditions are common.

The device is housed in a DPAK (TO-252) package, providing effective thermal performance and mechanical durability. Its AEC-Q101 qualification ensures it meets stringent automotive reliability standards, while its lead-free design complies with RoHS directives. These attributes make the IPD80R280P7ATMA1 a versatile and dependable solution for next-generation power electronics.

ICGOOODFIND:

The Infineon IPD80R280P7ATMA1 stands out as a high-performance Power MOSFET that addresses critical efficiency and durability requirements in both automotive and industrial applications. With ultra-low RDS(on), superior switching performance, and robust construction, it enables designers to develop more efficient and reliable systems.

Keywords:

Power MOSFET, High Efficiency, Automotive Applications, Low RDS(on), StrongIRFET Technology

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