Infineon IPD80R1K4P7ATMA1: High-Performance 800V CoolMOS™ P7 Power Transistor

In the realm of power electronics, efficiency, reliability, and thermal performance are paramount. The Infineon IPD80R1K4P7ATMA1 stands out as a premier solution, embodying the advanced CoolMOS™ P7 technology to meet the rigorous demands of modern high-voltage applications. This 800V superjunction MOSFET is engineered to deliver exceptional performance in switching power supplies, industrial drives, and renewable energy systems.

A key highlight of the IPD80R1K4P7ATMA1 is its ultra-low on-state resistance (RDS(on)), which minimizes conduction losses and enhances overall efficiency. The device leverages Infineon’s innovative superjunction structure, achieving an optimal balance between switching speed and breakdown voltage. This results in reduced switching losses, allowing for higher frequency operation and, consequently, more compact and cost-effective designs.

Thermal management is another area where this transistor excels. The CoolMOS™ P7 series is designed with improved thermal cycling capability, ensuring robust performance even under extreme temperature fluctuations. This makes it ideal for applications requiring long-term durability and stability, such as server power supplies and automotive onboard chargers.

Furthermore, the IPD80R1K4P7ATMA1 incorporates enhanced body diode characteristics, reducing reverse recovery charges and improving reliability in hard-switching scenarios. Its high dv/dt capability also contributes to better EMI performance, simplifying compliance with electromagnetic compatibility standards.

ICGOOODFIND: The Infineon IPD80R1K4P7ATMA1 exemplifies cutting-edge power semiconductor technology, offering designers a superior combination of efficiency, thermal resilience, and switching performance for next-generation high-voltage systems.

Keywords:

CoolMOS™ P7, High Voltage MOSFET, Power Efficiency, Thermal Performance, Superjunction Technology